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3DD13005F9-1 NPN Transistor

The 3DD13005F9-1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD13005F9-1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD13005F9-1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD13005F9-1 transistor as follows.

Circuit diagram symbol of the 3DD13005F9-1 transistor

3DD13005F9-1 Transistor Specification

Transistor Code 3DD13005F9-1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220F
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 750V
Collector-Emitter Voltage (Maximum) VCE 450V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 5MHz

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