3DD13005F8-1 NPN Transistor

The 3DD13005F8-1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD13005F8-1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD13005F8-1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD13005F8-1 transistor as follows.

3DD13005F8-1 Transistor Specification

Transistor Code		3DD13005F8-1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220AB
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	750V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	5MHz

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