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3DD13003W1D NPN Transistor

The 3DD13003W1D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD13003W1D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD13003W1D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD13003W1D transistor as follows.

Circuit diagram symbol of the 3DD13003W1D transistor

3DD13003W1D Transistor Specification

Transistor Code 3DD13003W1D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.8W
Collector-Base Voltage (Maximum) VCB 350V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 5MHz

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