3DD12 NPN Transistor

The 3DD12 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD12 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD12 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD12 transistor as follows.

3DD12 Transistor Specification

Transistor Code		3DD12
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	500W
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		10

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