3DA8E NPN Transistor

The 3DA8E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DA8E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DA8E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DA8E transistor as follows.

3DA8E Transistor Specification

Transistor Code		3DA8E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AB
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	15MHz

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