3DA608E NPN Transistor

The 3DA608E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DA608E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DA608E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DA608E transistor as follows.

3DA608E Transistor Specification

Transistor Code		3DA608E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	50MHz

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