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3CG8551 PNP Transistor

The 3CG8551 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 3CG8551 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3CG8551 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 3CG8551 transistor as follows.

Circuit diagram symbol of the 3CG8551 transistor

3CG8551 Transistor Specification

Transistor Code 3CG8551
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO92L
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 150MHz

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