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3CG6517M NPN Transistor

The 3CG6517M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3CG6517M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3CG6517M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3CG6517M transistor as follows.

Circuit diagram symbol of the 3CG6517M transistor

3CG6517M Transistor Specification

Transistor Code 3CG6517M
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code H3D
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 350V
Collector-Emitter Voltage (Maximum) VCE 350V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 40MHz
Collector Capacitance CC 6pF

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