2SD859A NPN Transistor

The 2SD859A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD859A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD859A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD859A transistor as follows.

2SD859A Transistor Specification

Transistor Code		2SD859A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	35W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	0.75A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40

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