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2SD826G NPN Transistor

The 2SD826G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD826G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD826G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD826G transistor as follows.

Circuit diagram symbol of the 2SD826G transistor

2SD826G Transistor Specification

Transistor Code 2SD826G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 280
Transition Frequency FT 120MHz
Collector Capacitance CC 45pF

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