2SD325E NPN Transistor

The 2SD325E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD325E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD325E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD325E transistor as follows.

2SD325E Transistor Specification

Transistor Code		2SD325E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	7W
Collector-Base Voltage (Maximum)	VCB	35V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	140°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	8MHz

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