2SD2561P NPN Transistor

The 2SD2561P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD2561P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD2561P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD2561P transistor as follows.

2SD2561P Transistor Specification

Transistor Code		2SD2561P
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		MT200
Collector Power Dissipation (Maximum)	PC	200W
Collector-Base Voltage (Maximum)	VCB	150V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	17A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		6500
Transition Frequency	FT	70MHz
Collector Capacitance	CC	120pF

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