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2SD2560P NPN Transistor

The 2SD2560P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD2560P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD2560P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD2560P transistor as follows.

Circuit diagram symbol of the 2SD2560P transistor

2SD2560P Transistor Specification

Transistor Code 2SD2560P
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3-P
Collector Power Dissipation (Maximum) PC 130W
Collector-Base Voltage (Maximum) VCB 150V
Collector-Emitter Voltage (Maximum) VCE 150V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 6500
Transition Frequency FT 70MHz
Collector Capacitance CC 120pF

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