2SD1618E NPN Transistor

The 2SD1618E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1618E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1618E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1618E transistor as follows.

2SD1618E Transistor Specification

Transistor Code		2SD1618E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SP0
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	250MHz
Collector Capacitance	CC	8pF

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