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2SD1610D NPN Transistor

The 2SD1610D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1610D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1610D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1610D transistor as follows.

Circuit diagram symbol of the 2SD1610D transistor

2SD1610D Transistor Specification

Transistor Code 2SD1610D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 1.25W
Collector-Base Voltage (Maximum) VCB 200V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 160
Transition Frequency FT 140MHz
Collector Capacitance CC 3.8pF

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