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2SD1412O NPN Transistor

The 2SD1412O is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1412O transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1412O transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1412O transistor as follows.

Circuit diagram symbol of the 2SD1412O transistor

2SD1412O Transistor Specification

Transistor Code 2SD1412O
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package ISO220
Collector Power Dissipation (Maximum) PC 30W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 7A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 70
Transition Frequency FT 10MHz
Collector Capacitance CC 250pF

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