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2SD1355R NPN Transistor

The 2SD1355R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1355R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1355R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1355R transistor as follows.

Circuit diagram symbol of the 2SD1355R transistor

2SD1355R Transistor Specification

Transistor Code 2SD1355R
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 40W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 12MHz
Collector Capacitance CC 100pF

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