2SD1213Q NPN Transistor

The 2SD1213Q is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1213Q transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1213Q transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1213Q transistor as follows.

2SD1213Q Transistor Specification

Transistor Code		2SD1213Q
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO247
Collector Power Dissipation (Maximum)	PC	60W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	120MHz

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