2SD1165A NPN Transistor

The 2SD1165A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1165A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1165A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1165A transistor as follows.

2SD1165A Transistor Specification

Transistor Code		2SD1165A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SPECIAL
Collector Power Dissipation (Maximum)	PC	1250W
Collector-Base Voltage (Maximum)	VCB	1000V
Collector-Emitter Voltage (Maximum)	VCE	900V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		60

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