2SD1161P4 NPN Transistor

The 2SD1161P4 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1161P4 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1161P4 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1161P4 transistor as follows.

2SD1161P4 Transistor Specification

Transistor Code		2SD1161P4
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	100MHz
Collector Capacitance	CC	6pF

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