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2SD1160O NPN Transistor

The 2SD1160O is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1160O transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1160O transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1160O transistor as follows.

Circuit diagram symbol of the 2SD1160O transistor

2SD1160O Transistor Specification

Transistor Code 2SD1160O
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO218
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100

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