2SD1101B NPN Transistor

The 2SD1101B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1101B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1101B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1101B transistor as follows.

2SD1101B Transistor Specification

Transistor Code		2SD1101B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Transistor SMD Code		AB
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	25V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		85

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