2SD1080S NPN Transistor

The 2SD1080S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1080S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1080S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1080S transistor as follows.

2SD1080S Transistor Specification

Transistor Code		2SD1080S
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200

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