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2SD1006HM NPN Transistor

The 2SD1006HM is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1006HM transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1006HM transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1006HM transistor as follows.

Circuit diagram symbol of the 2SD1006HM transistor

2SD1006HM Transistor Specification

Transistor Code 2SD1006HM
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SP0
Transistor SMD Code HM
Collector Power Dissipation (Maximum) PC 2W
Collector-Base Voltage (Maximum) VCB 100V
Collector Current (Maximum) IC 0.7A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 90
Transition Frequency FT 45MHz
Collector Capacitance CC 12pF

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