2SC830H NPN Transistor

The 2SC830H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SC830H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SC830H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SC830H transistor as follows.

2SC830H Transistor Specification

Transistor Code		2SC830H
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO66
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	55V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	3MHz
Collector Capacitance	CC	240pF

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