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2SC6114T1GP NPN Transistor

The 2SC6114T1GP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SC6114T1GP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SC6114T1GP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SC6114T1GP transistor as follows.

Circuit diagram symbol of the 2SC6114T1GP transistor

2SC6114T1GP Transistor Specification

Transistor Code 2SC6114T1GP
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT923
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 130MHz
Collector Capacitance CC 1pF

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More Transistors Datasheets in SOT923 Package