2SC5551AE-TD-E NPN Transistor

The 2SC5551AE-TD-E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SC5551AE-TD-E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SC5551AE-TD-E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SC5551AE-TD-E transistor as follows.

2SC5551AE-TD-E Transistor Specification

Transistor Code		2SC5551AE-TD-E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		EB
Collector Power Dissipation (Maximum)	PC	1.3W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	3500MHz
Collector Capacitance	CC	2.9pF

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