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2SC5551AE-TD-E NPN Transistor

The 2SC5551AE-TD-E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SC5551AE-TD-E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SC5551AE-TD-E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SC5551AE-TD-E transistor as follows.

Circuit diagram symbol of the 2SC5551AE-TD-E transistor

2SC5551AE-TD-E Transistor Specification

Transistor Code 2SC5551AE-TD-E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT89
Transistor SMD Code EB
Collector Power Dissipation (Maximum) PC 1.3W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 2V
Forward Current Transfer Ratio (hFE Value) 90
Transition Frequency FT 3500MHz
Collector Capacitance CC 2.9pF

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