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2SB816E PNP Transistor

The 2SB816E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB816E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB816E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB816E transistor as follows.

Circuit diagram symbol of the 2SB816E transistor

2SB816E Transistor Specification

Transistor Code 2SB816E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 150V
Collector-Emitter Voltage (Maximum) VCE 150V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 7.5MHz
Collector Capacitance CC 220pF

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