2SB806KR PNP Transistor

The 2SB806KR is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB806KR transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB806KR transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB806KR transistor as follows.

2SB806KR Transistor Specification

Transistor Code		2SB806KR
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SP0
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	35MHz
Collector Capacitance	CC	17pF

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