2SB559E PNP Transistor

The 2SB559E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB559E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB559E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB559E transistor as follows.

2SB559E Transistor Specification

Transistor Code		2SB559E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	8W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	1.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	75MHz
Collector Capacitance	CC	60pF

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