2SB444H PNP Transistor

The 2SB444H is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB444H transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB444H transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB444H transistor as follows.

2SB444H Transistor Specification

Transistor Code		2SB444H
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO1
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	18V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	85°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	1MHz

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