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2SB1412-P PNP Transistor

The 2SB1412-P is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1412-P transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1412-P transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1412-P transistor as follows.

Circuit diagram symbol of the 2SB1412-P transistor

2SB1412-P Transistor Specification

Transistor Code 2SB1412-P
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO252
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 82
Transition Frequency FT 120MHz
Collector Capacitance CC 60pF

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