2SB1386GP PNP Transistor

The 2SB1386GP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1386GP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1386GP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1386GP transistor as follows.

2SB1386GP Transistor Specification

Transistor Code		2SB1386GP
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT89
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		82
Transition Frequency	FT	120MHz
Collector Capacitance	CC	60pF

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