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2SB1302T-TD-E PNP Transistor

The 2SB1302T-TD-E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1302T-TD-E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1302T-TD-E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1302T-TD-E transistor as follows.

Circuit diagram symbol of the 2SB1302T-TD-E transistor

2SB1302T-TD-E Transistor Specification

Transistor Code 2SB1302T-TD-E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT89
Transistor SMD Code BJ
Collector Power Dissipation (Maximum) PC 1.3W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 320MHz
Collector Capacitance CC 60pF

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