2SB1260-Q PNP Transistor

The 2SB1260-Q is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1260-Q transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1260-Q transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1260-Q transistor as follows.

2SB1260-Q Transistor Specification

Transistor Code		2SB1260-Q
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		BEQ_ZL_ZLQ
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	100MHz
Collector Capacitance	CC	25pF

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