2SB1197KRLT1 PNP Transistor

The 2SB1197KRLT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1197KRLT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1197KRLT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1197KRLT1 transistor as follows.

2SB1197KRLT1 Transistor Specification

Transistor Code		2SB1197KRLT1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	200MHz
Collector Capacitance	CC	12pF

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