2SB1182R PNP Transistor

The 2SB1182R is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1182R transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1182R transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1182R transistor as follows.

2SB1182R Transistor Specification

Transistor Code		2SB1182R
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO252
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	100MHz
Collector Capacitance	CC	50pF

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