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2SB1176 PNP Transistor

The 2SB1176 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1176 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1176 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1176 transistor as follows.

Circuit diagram symbol of the 2SB1176 transistor

2SB1176 Transistor Specification

Transistor Code 2SB1176
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO218
Collector Power Dissipation (Maximum) PC 15W
Collector-Base Voltage (Maximum) VCB 130V
Collector-Emitter Voltage (Maximum) VCE 130V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 90

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