2SB1160 PNP Transistor

The 2SB1160 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1160 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1160 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1160 transistor as follows.

2SB1160 Transistor Specification

Transistor Code		2SB1160
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	150V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	9A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		90

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