2SB1135Q PNP Transistor

The 2SB1135Q is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1135Q transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1135Q transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1135Q transistor as follows.

2SB1135Q Transistor Specification

Transistor Code		2SB1135Q
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		ISO220
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	10MHz

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