2SB1120G PNP Transistor

The 2SB1120G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1120G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1120G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1120G transistor as follows.

2SB1120G Transistor Specification

Transistor Code		2SB1120G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SP0
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		280
Transition Frequency	FT	250MHz
Collector Capacitance	CC	70pF

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