2SB1119R PNP Transistor

The 2SB1119R is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1119R transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1119R transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1119R transistor as follows.

2SB1119R Transistor Specification

Transistor Code		2SB1119R
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SP0
Collector Power Dissipation (Maximum)	PC	0.75W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	165°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	180MHz
Collector Capacitance	CC	25pF

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