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2SB1109 PNP Transistor

The 2SB1109 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SB1109 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SB1109 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SB1109 transistor as follows.

Circuit diagram symbol of the 2SB1109 transistor

2SB1109 Transistor Specification

Transistor Code 2SB1109
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 140MHz
Collector Capacitance CC 5.5pF

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