2SAB26N PNP Transistor

The 2SAB26N is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SAB26N transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SAB26N transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SAB26N transistor as follows.

2SAB26N Transistor Specification

Transistor Code		2SAB26N
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO3
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		34

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