2SA876HB PNP Transistor

The 2SA876HB is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA876HB transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA876HB transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA876HB transistor as follows.

2SA876HB Transistor Specification

Transistor Code		2SA876HB
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		170
Transition Frequency	FT	100MHz
Collector Capacitance	CC	20pF

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