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2SA876H PNP Transistor

The 2SA876H is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA876H transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA876H transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA876H transistor as follows.

Circuit diagram symbol of the 2SA876H transistor

2SA876H Transistor Specification

Transistor Code 2SA876H
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO18
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 100MHz
Collector Capacitance CC 20pF

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