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2SA812QLT1 PNP Transistor

The 2SA812QLT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA812QLT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA812QLT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA812QLT1 transistor as follows.

Circuit diagram symbol of the 2SA812QLT1 transistor

2SA812QLT1 Transistor Specification

Transistor Code 2SA812QLT1
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT-23
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.15A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 180MHz
Collector Capacitance CC 4.5pF

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