2SA2013-TD-E PNP Transistor

The 2SA2013-TD-E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA2013-TD-E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA2013-TD-E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA2013-TD-E transistor as follows.

2SA2013-TD-E Transistor Specification

Transistor Code		2SA2013-TD-E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		AT
Collector Power Dissipation (Maximum)	PC	1.3W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	360MHz
Collector Capacitance	CC	24pF

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