2SA1386P PNP Transistor

The 2SA1386P is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA1386P transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA1386P transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA1386P transistor as follows.

2SA1386P Transistor Specification

Transistor Code		2SA1386P
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO3P
Collector Power Dissipation (Maximum)	PC	130W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	40MHz
Collector Capacitance	CC	500pF

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