2SA1306O PNP Transistor

The 2SA1306O is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA1306O transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA1306O transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA1306O transistor as follows.

2SA1306O Transistor Specification

Transistor Code		2SA1306O
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	100MHz
Collector Capacitance	CC	30pF

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